? design assistance ? assembly assistance ? die handling consultancy ? hi - rel die qualification ? hot & cold die probing ? electrical test & trimming ? customised pack sizes / qtys ? support for all industry recognised ? 100% visual inspection contact baredie@micross.com for price, delivery and to place orders HMC392 supply formats: o waffle pack o gel pak o tape & reel ? onsite storage, stockholding & scheduling ? on - site failure analysis ? bespoke 24 hour monitored storage systems for secure long term product support o mil - std 883 condition a o mil - std 883 condition a ? on - site failure analysis www.analog.com www.micross.com
analog devices welcomes hittite microwave corporation no content on the attached documen t has changed www.analog.com www.hittite.com
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low noise amplifiers - chip 1 1 - 20 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com HMC392 gaas mmic low noise amplifier, 3.5 - 7.0 ghz v02.0907 general description features functional diagram the HMC392 is a gaas mmic low noise amplifi er die which operates between 3.5 and 7.0 ghz. the amplifi er provides 15.5 db of gain, 2.4 db noise fi gure, and 28 dbm ip3 from a +5v supply voltage. the HMC392 has six bonding adjustment options which allow the user to select the bias point and output power of the device (+15 to +18 dbm). the HMC392 amplifi er can easily be integrated into multi-chip- modules (mcms) due to its small (1.3 mm 2 ) size. all data is with the chip in a 50 ohm test fi xture connected via 0.025mm (1 mil) diameter wire bonds of minimal length 0.31mm (12 mils). gain: 15.5 db noise figure: 2.4 db single supply voltage: +5v 50 ohm matched input/output no external components required small size: 1.3 x 1.0 x 0.1 mm electrical specifi cations , t a = +25 c, vdd = 5v typical applications the HMC392 is ideal for: ? point-to-point radios ? vsat ? lo driver for hmc mixers ? military ew, ecm, c 3 i ? space parameter min. typ. max. min. typ. max. units frequency range 4.0 - 6.0 3.5 - 7.0 ghz gain 13 15.5 19 11.5 14 19 db gain variation over temperature 0.018 0.025 0.018 0.025 db/ c noise figure 2.4 3.0 2.8 3.4 db input return loss 15 10 db output return loss 15 10 db output power for 1 db compression (p1db) 13 16 12 16 dbm saturated output power (psat) 18 18 dbm output third order intercept (ip3) 25 28 23 28 dbm supply current (idd) 50 66 50 66 ma note: data taken with pads ps4 and ps8 bonded to ground (state 5) unless otherwise noted.
low noise amplifiers - chip 1 1 - 21 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature noise figure vs. temperature reverse isolation vs. temperature -25 -20 -15 -10 -5 0 5 10 15 20 23456789 s21 s11 s22 response (db) frequency (ghz) -25 -20 -15 -10 -5 0 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 +25c +85c -55c return loss (db) frequency (ghz) -60 -50 -40 -30 -20 -10 0 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 +25c +85c -55c isolation (db) frequency (ghz) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 +25c +85c -55c noise figure (db) frequency (ghz) -25 -20 -15 -10 -5 0 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 +25c +85c -55c return loss (db) frequency (ghz) 5 8 11 14 17 20 345678 +25c +85c -55c gain (db) frequency (ghz) HMC392 v02.0907 gaas mmic low noise amplifier, 3.5 - 7.0 ghz
low noise amplifiers - chip 1 1 - 22 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com output ip3 vs. temperature gain, noise figure & power vs. supply voltage @ 5.5 ghz p1db vs. temperature psat vs. temperature p1db vs. power select state gain & noise figure vs. power select state 0 4 8 12 16 20 4.5 4.75 5 5.25 5.5 gain noise figure p1db gain (db), noise figure (db), p1db (dbm) vs (v) 0 2 4 6 8 10 12 14 16 18 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 gain state 1 gain state 2 gain state 3 gain state 4 gain state 5 gain state 6 nf state 1 nf state 2 nf state 3 nf state 4 nf state 5 nf state 6 gain, noise figure (db) frequency (ghz) 10 12 14 16 18 20 22 3.5 4 4.5 5 5.5 6 6.5 state 1 idd=75ma state 2 idd=62ma state 3 idd=55ma state 4 idd=65ma state 5 idd=50ma state 6 idd=46ma p1db (dbm) frequency (ghz) 20 22 24 26 28 30 32 345678 +25c +85c -55c ip3 (dbm) frequency (ghz) 10 12 14 16 18 20 22 345678 +25c +85c -55c psat (dbm) frequency (ghz) 10 12 14 16 18 20 22 345678 +25c +85c -55c p1db (dbm) frequency (ghz) HMC392 v02.0907 gaas mmic low noise amplifier, 3.5 - 7.0 ghz
low noise amplifiers - chip 1 1 - 23 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com outline drawing absolute maximum ratings drain bias voltage (vdd) 7 vdc rf input power (rfin)(vdd = +5 vdc) +11 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 7.1 mw/c above 85 c) 0.64 w thermal resistance (channel to die bottom) 140 c/ w storage temperature -65 to +150 c operating temperature -55 to +85 c notes: 1. all dimensions in inches [millimeters] 2. all tolerances are 0.001 (0.025) 3. die thickness is 0.004 (0.100) backside is ground 4. bond pads are 0.004 (0.100) square 5. bond pad spacing, ctr-ctr: 0.006 (0.150) 6. backside metallization: gold 7. bond pad metallization: gold typical supply current vs. vdd vdd (vdc) idd (ma) +4.5 49 +5.0 50 +5.5 51 (state 5 depicted) electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate wp-16 (waffle pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. HMC392 v02.0907 gaas mmic low noise amplifier, 3.5 - 7.0 ghz
low noise amplifiers - chip 1 1 - 24 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com pad descriptions pad number function description interface schematic 2rfin this pad is ac coupled and matched to 50 ohms 3 4 power select ps3 ps4 one of these pads must be connected to ground. see power select table for selection criteria. 7 8 9 power select ps7 ps8 ps9 one of these pads must be connected to ground. see power select table for selection criteria. 1, 5 vdd, vdd (alt.) power supply voltage. connect either pad1 or pad5 to +5v supply. no choke inductor or bypass capacitor is needed. 6rfout this pad is ac coupled and matched to 50 ohms die bottom gnd die bottom must be connected to rf/dc ground. power select table state pads bonded to ground typical idd (ma) typical p1db (dbm) 1 ps3 & ps7 75 18.4 2 ps3 & ps8 62 17.9 3 ps3 & ps9 55 16.4 4 ps4 & ps7 65 17.7 5 ps4 & ps8 50 16.9 6 ps4 & ps9 46 15.5 HMC392 v02.0907 gaas mmic low noise amplifier, 3.5 - 7.0 ghz
low noise amplifiers - chip 1 1 - 25 for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com assembly diagram handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fi ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fl at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a te m- perature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fi llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). note: state 5 shown. ps4 and ps8 bonded to ground. HMC392 v02.0907 gaas mmic low noise amplifier, 3.5 - 7.0 ghz
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